Our Si823H3BD-IS3 isolated gate drivers offer very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over a wide operating temperature range of -40 to 125 °C. It offers critical safety features such as dead time programmability, integrated deglitcher, driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H3BD-IS3 isolators are offered in a High Side / Low Side configuration.
Isolation Rating
5
|
Peak Output Current
4.0
|
|
UVLO Voltage
8
|
Input Type
VIA, VIB
|
|
Output Configuration
High Side / Low Side
|
Package
WB SOIC14
|
|
Isolation Rating
5
|
Peak Output Current
4.0
|
UVLO Voltage
8
|
Input Type
VIA, VIB
|
Output Configuration
High Side / Low Side
|
Package
WB SOIC14
|
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